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| SEMICONDUCTOR TECHNICAL SPECIFICATION RECTRON MCL4448 1N4448 Micro-MELF SIGNAL DIODE Absolute Maximum Ratings (Ta = 25C) ITEMS Peak Reverse Voltage Reverse Recovery Time Power Dissipation Forward Current Junction Temp. Storage Temp. Symbol VRM trr P IFM Tj Tstg Ratings 100 4 500 500 * (-65 to 175) (-65 to 175) Unit V ns mW mA C C Micro-MELF 0.049(1.25) 0.047(1.20) 0.008(0.2) 0.079(2.0) 0.071(1.8) Units in mm Mechanical Data Items Package Case Lead/Finish Chip Materials Micro MELF Hermetically sealed glass Double stud/Solder Plating Glass Passivated Ratings Non-Repetive Peak Reverse Voltage Minimum Breakdown Voltage @IR= 100mA Peak Forward Surge Current @ t = 1.0s Forward Continuous Current Maximum Forward Voltage IF= 100mA Maximum Reverse Current VR= 20V VR= 75V VR= 20V, Tj = 150 C Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IR= -1mA, RL = 100 Maximum Thermal Resistance * Note: Device terminals at ambient temperature Symbol VRM BV IFSM IFM VF Ratings 100 75 1* 500 * 1 25 Unit V V A mA V nA A A IR 5 30 Cj trr RJA 4 4 300 pF ns K/W |
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